? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm bas70 schottky schottky schottky schottky diode diode diode diode ?O (ba (ba (ba (ba s70 s70 s70 s70 ) ) ) ) features c device device device device marking marking marking marking electrical electrical electrical electrical characteristics characteristics characteristics characteristics (t (t (t (t a a a a = = = = 25 25 25 25 unless unless unless unless otherwise otherwise otherwise otherwise noted noted noted noted of?? 25 ) ) ) ) sot-23 ?? 1 characteristic ? symbol ? max ? unit power dissipation ? p d (ta=25 ) 225 mw forward current i f 7 0 ma reverse voltage ? v r 7 0 v junction and storage temperature Y???? t j , t stg - 5 5to+150 ba ba ba ba s70 s70 s70 s70 = = = = be be be be characteristic ? symbol ? min ? ma x ? unit reverse breakdown voltage ? (ir=10ua) v (br) 7 0 v reverse leakage current ? (vr= 50 v) (vr= 70 v) i r 0.1 10 ua forward voltage(test condition) ? i f = 1madc i f = 10madc i f = 15 madc v f 41 0 75 0 10 00 mv diode capacitance Ow (v r =1v, f=1mhz) c d 2 pf reverse recovery time ??rg t rr 5 ns
? ? ? ? guilin guilin guilin guilin strong strong strong strong micro-electronics micro-electronics micro-electronics micro-electronics co.,ltd. co.,ltd. co.,ltd. co.,ltd. gm bas70 dimension dimension dimension dimension b?
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